Workshop program

Preliminary programme
Sunday - 13.10.2019
19:00 21:00 Welcoming glass of wine and registration
Monday - 14.10.2019
8:30 Registration desk open
9:00 9:10 Opening Address
Session 1: Vertically Emitting Lasers I
9:10 9:50 J. Guenter Finisar Corporation, USA Invited A short long VCSEL history  
9:50 10:05 M. Gębski Lodz University of Technology, Poland Contributed Progress in Monolithic High-Contrast Grating Vertical-Cavity Surface-Emitting Lasers
10:05 10:20 J. Muszalski Łukasiewicz Research Network - Institute of Electron Technology, Poland Contributed Peculiar emission properties of MECSEL
10:20 10:35 M. Marciniak Technische Universität Berlin, Germany Contributed Monolithic High Contrast Gratings as highly reflective mirrors for VCSEL applications
10:35 10:50 M. Wasiak Lodz University of Technology, Poland Contributed Numerical model for impedance in semiconductor lasers
10:50 11:05 E. Pruszyńska-Karbownik Lodz University of Technology, Poland Contributed Impact of oxidation parameters on electrical modulation properties of GaAs-based VCSEL-s
Coffee break
Session 2: Novel materials and designs I
11:30 12:10 J. Pan Chinese Academy of Sciences, China Invited Two-dimensional Large-angle Scanning Optical Phased Array with Single Wavelength Beam  
12:10 12:25 J. Suffczyński University of Warsaw, Poland Contributed Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity embedding a single quantum well
12:25 12:40 H. Teisseyre Polish Academy of Sciences, Warsaw, Poland Contributed Towards a new laser application of (MgZn)O/MgO based quantum structures
12:40 12:55 L. Frasunkiewicz Lodz University of Technology, Poland Contributed Mixing of transverse modes in VCSELs with vertically coupled-cavities and Parity-Time symmetry breaking of mixed modes
12:55 13:10 H. Mączko Wroclaw University of Science and Technology, Poland Contributed Strain Engineering of Material Gain Coefficient in a GeSn/SiGeSn Quantum Wells
Lunch break
Session 3: Nitride Lasers
14:10 14:25 G. Muzioł Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Optical properties of III-nitride laser diodes with wide InGaN quantum wells
14:25 14:40 S. Stanczyk Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed (Al,In)GaN Distributed Feedback Laser Diode
14:40 14:55 S. Grzanka Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Beyond the comfort zone: challenges for nitride laser diodes below 400 nm and above 470 nm
14:55 15:10 K. Gibasiewicz Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Towards integrated on wafer InGaN laser diodes
Coffee break
15:30 15:45 M. Chlipała Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Low temperature study of inverted nitride light emitting devices
15:45 16:00 M. Hajdel Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes
16:00 16:15 A. Bojarska Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Dislocation related nonradiative recombination in InGaN laser diodes
16:15 16:30 K. Nowakowski-Szkudlarek Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Optimization of p-type contacts to InGaN-based LDs and LEDs grown by plasma assisted molecular beam epitaxy
Poster session
16:30 18:30 Poster session
Tuesday - 15.10.2019
Session 4: Novel materials and designs II
9:00 9:40 J. Koeth Nanoplus GmbH, Germany Invited NIR and MIR Lasers and their use in sensing applications  
9:40 9:55 M. Motyka Wroclaw University of Science and Technology, Poland Contributed The interface importance in different types of mid infrared emitters
9:55 10:10 Z. Wang ETH Zurich, Switzerland Contributed Large Area Surface-Emitting Photonic Crystal Quantum Cascade Laser
10:10 10:25 E. Rogowicz Wroclaw University of Science and Technology, Poland Contributed Optical properties and carrier dynamics in GaSbBi(In)/GaSb quantum wells for laser applications in the 1.9-2.5 μm spectral range
10:25 10:40 E. Semenova Technical University of Denmark, Denmark Contributed MOVPE of InAs/InP quantum dots operating at 1550 nm for photonics applications
10:40 10:55 M. Syperek Wroclaw University of Science and Technology, Poland Contributed Optical properties of InAs/InP quantum dots grown via selective area droplet epitaxy assisted by block-copolymer lithography
Coffee break
Session 5: Vertically Emitting Lasers II
11:20 12:00 J. Lott Technical University of Berlin, Germany Invited VCSELs and small VCSEL arrays for communication and sensing  
12:00 12:15 N. Haghighi Technical University of Berlin, Germany Contributed Triple 980 nm VCSEL arrays
12:15 12:30 M. Gębski Lodz University of Technology, Poland Contributed Temperature Stable 980 nm Vertical-Cavity Surface-Emitting Lasers for Optical Communication
12:30 12:45 A. K. Sokół Lodz University of Technology, Poland Contributed Transparent grating contacts for vertical-cavity surface-emitting lasers
12:45 13:00 W. Głowadzka Lodz University of Technology, Poland Contributed Observation of high quality factor Fano resonance in subwavelength gratings
13:00 13:15 M. Marciniak Lodz University of Technology, Poland Contributed Impact of top mirror on VCSEL performance
Lunch break
Session 6: Applications of Semiconductor Lasers
14:15 14:55 G. Wysocki Princeton University, USA Invited Dual-comb spectroscopy and hyperspectral imaging with quantum- and interband-cascade frequency combs  
14:55 15:10 P. Kluczyński Airoptic, Poland Contributed Multi-laser in-situ analyzer for real time control of deSOx and deNOx processes in a waste incinerator plant
15:10 15:25 M. Nikodem Wroclaw University of Science and Technology, Poland Contributed Quantum Cascade Lasers and Hollow Core Fibers – Towards Integration and Size Reduction in the Mid-Infrared Systems
14:25 15:40 M. Singleton ETH Zurich, Switzerland Contributed Compressed Pulses from a Mid-IR QCL Comb
15:40 15:55 J. Wojtas Military University of Technology, Warsaw, Poland Contributed Low noise photoreceivers for trace gas detection techniques
15:55 16:10 F. Kapsalidis ETH Zurich, Switzerland Contributed RF-Enhanced Waveguide Quantum Cascade Laser Frequency Combs
Conference dinner
20:00 Dinner on a boat
Wednesday - 16.10.2019
Session 7: Vertically Emitting Lasers III
10:00 10:40 D. Cohen University of California, Santa Barbara, USA Invited Polarized blue InGaN VCSELs and Monolithic VECSELs  
10:40 10:55 P. Śpiewak Lodz University of Technology, Poland Contributed Computer Modeling of Nitride VCSELs
10:55 11:10 N. Fiuczek Institute of High Pressure Physics "Unipress", PAS, Warsaw, Poland Contributed Nanoporous DBRs – towards monolithic nitride VCSELs
11:10 11:25 A. Brejnak Lodz University of Technology, Poland Contributed Spectrally resolved modes in real-world VCSELs with irregular shapes of broad oxide-confined apertures
11:25 11:40 S. Grzempa Lodz University of Technology, Poland Contributed Parameter optimization of quantum-cascade VCSELs
Coffee break
Session 8: Quantum Cascade Lasers
12:00 12:40 A. Albo Bar-Ilan University, Ramat Gan, Israel Invited Towards Room Temperature Operation of Terahertz Quantum Cascade Lasers: Carrier Leakage Engineering as a Novel Design Concept  
12:40 12:55 K. Pierściński Łukasiewicz Research Network - Institute of Electron Technology, Poland Contributed Monolithic, optically-coupled, multi-section mid-IR quantum cascade lasers
12:55 13:10 M. Badura Wrocław University of Science and Technology, Poland Contributed Challenges of MOVPE growth of quantum cascade lasers
13:10 13:25 P. Gutowski Łukasiewicz Research Network - Institute of Electron Technology, Poland Contributed Optimization of MBE Growth Conditions of InP-based quantum cascade lasers
13:25 13:40 M. Shahmohammadi ETH Zurich, Switzerland Contributed Exceptional Point in Distributed Feedback Quantum Cascade Lasers
13:40 13:55 D. Pierścińska Łukasiewicz Research Network – Institute of Electron Technology, Poland Contributed Influence of design variations on QCL performance
13:55 Closing remarks
14:00 Farewell lunch

Posters

T. Smołka, M. Rygała, M. Dyksik, K. Ryczko, G. Sęk, S. Höfling, M. Motyka Carrier lifetimes determination in type I and II QWs emitting at 2 µm
M. Rygała, T. Smołka, M. Kurka. J. Hilska, E. Koivusalo, M. Guina, M. Motyka The influence of bismuth incorporation into GaSb on the photoluminescence quenching and carrier lifetimes
M. Kurka, M. Badura, M. Dyksik, K. Ryczko, J. Kopaczek, J. Misiewicz, B. Ściana, M. Tłaczała, I. Sankowska, K. Pierściński, M. Motyka Studies of the atom's interface diffusion processes in InGaAs/AlInAs quantum cascade lasers
A. Zielińska, G. Sęk, K. Ryczko Towards broad gain interband cascade lasers in the mid-infrared: theoretical considerations
K. Ryczko, G. Sęk Optical gain in unstrained interband cascade lasers
B. Jeżewski, A. Kuźmicz, A. Broda, J. Muszalski Membrane technology for MECSEL fabricated on InP substrate
A. Broda, B. Jeżewski, I. Sankowska, K. Czuba, A. Kuźmicz, J. Muszalski Optical wafer characterization for MECSEL laser emitting above telecommunication band
P. Komar, M. Gębski, M. Dems, T. Czyszanowski, M. Wasiak Long focal-length planar focusing reflectors based on monolithic high contrast gratings
G. Sobczak, K. Pierściński, D. Pierścińska, A. Kuźmicz, K. Krajewska, P. Gutowski, M. Bugajski Tapered quantum cascade lasers with different shape of the taper section
A. Kuźmicz, K. Chmielewski, G. Sobczak, K. Michalak, K. Pierściński, D. Pierścińska and M. Bugajski Preparation of 9 µm wavelength QCLs with double optical gap using plasma etching
K. Saba, A. Kafar, K. Gibasiewicz, A. Bojarska, P. Perlin Towards realization of two-dimensional vertical emission arrays of visible laser diodes
A. Łozińska, M. Badura, J. Jadczak, K. Bielak, B. Ściana Photoluminescence and Raman spectroscopies as an optical approach of stresses determining in MOVPE grown quantum cascade laser structures
D. Szabra, J. Mikołajczyk, A. Prokopiuk, K. Achtenberg, Z. Bielecki, J. Wojtas Compact and high speed drivers for quantum cascade lasers
P. Śpiewak, A. K. Sokół, M. Wasiak, R. P. Sarzała Impact of the Imperfections in Fabrication of Selected Elements of a Nitride TJ VCSEL on Its Emission Characteristics
D. Schiavon, J. Kacperski, A. Kafar, K. Saba, S. Grzanka, P. Perlin Lateral Carrier Injection for the Uniform Pumping of Several Quantum Wells in InGaN/GaN Optoelectronic Devices
D. Biegańska, M. Pieczarka, C. Schneider, S. Hofling, M. Syperek Towards room temperature polaritonic lasing in a GaAs-based microcavity system
E. Karbownik-Pruszyńska, M. Gębski, M. Marciniak, J. A. Lott, T. Czyszanowski Near-threshold behaviour of single-mode and multiple-mode 980 nm VCSELs
M. Gębski, D. Dontsova, K. Nunna, R. Yanka, A. Johnson, R. Pelzel, J. Lott 1300nm VCSELs on GaAs: Return of the Dilute Nitride?
T. Czyszanowski, M. Dems, M. Wasiak Quasi bound states in the continuum of monolithic high-contrast grating microcavities
E. Rogowicz, J. Kopaczek, R. Kudrawiec, M. Myronov, M. Syperek Carrier dynamic in GeSn alloys: the issue of below bandgap states